发明名称 Memory devices and wireless devices including the same
摘要 A memory device includes a plurality of memory bit lines connected to a plurality of memory cells, a plurality of reference bit lines connected to a plurality of reference cells and a reference bit line selection circuit. The memory bit lines has a first pattern and a second pattern, and the first pattern has a first critical dimension (CD) distribution, and the second pattern has a second CD distribution. The reference bit lines have the first pattern and the second pattern. The reference bit line selection circuit provides a reference signal by selecting a reference bit line having a same pattern as a selected memory bit line connected to a memory cell to be read.
申请公布号 US8174865(B2) 申请公布日期 2012.05.08
申请号 US20100707871 申请日期 2010.02.18
申请人 RHIE HYOUNG-SEUB;LEE SUK-JOO;SAMSUNG ELECTRONICS CO., LTD. 发明人 RHIE HYOUNG-SEUB;LEE SUK-JOO
分类号 G11C11/00 主分类号 G11C11/00
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