发明名称 Semiconductor device
摘要 To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.
申请公布号 US8174047(B2) 申请公布日期 2012.05.08
申请号 US20090495963 申请日期 2009.07.01
申请人 FUKUOKA OSAMU;HAYAKAWA MASAHIKO;SHISHIDO HIDEAKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUKUOKA OSAMU;HAYAKAWA MASAHIKO;SHISHIDO HIDEAKI
分类号 H01L29/66 主分类号 H01L29/66
代理机构 代理人
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