SUBSTRATE STRUCTURE HAVING A BURIED WIRING AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME USING THE SUBSTRATE STRUCTURE

摘要

PURPOSE: A substrate structure with a buried wiring, a semiconductor device using the same, manufacturing methods thereof are provided to easily control the depth of an ion injection layer by controlling the size of ion injection energy for accelerating ions. CONSTITUTION: An insulation layer(150) is formed on a support substrate(160). A line type conductive layer pattern(122) extended in a first direction is formed in the insulation layer. A line type semiconductor pattern(104) is formed on the upper side of the conductive layer pattern and in the inside of the insulation layer. A barrier layer pattern(112) is formed between the conductive layer pattern and the semiconductor pattern. A capping layer pattern(132) is formed on the lower side of the conductive layer pattern.