发明名称 Stacked multi-chip
摘要 A stacked multi-chip comprises a base layer, a first chip, a first stacked chip and at least one second stacked chip. The base layer comprises a mounting panel and a redistributed layer. The redistributed layer is mounted on the mounting panel. The first chip comprises an electrically non-conductive layer and a connective layer. The electrically non-conductive layer comprises a TSV channel. The connective layer abuts the redistributed layer. The first stacked chip is mounted on the first chip and comprises an electrically non-conductive layer and a connective layer. The electrically non-conductive layer comprises a TSV channel that is connected to the TSV channel of the first chip. The second stacked chip is mounted on the first stacked chip and comprises an electrically non-conductive layer and a connective layer. The electrically non-conductive layer comprises a TSV channel. The connective layer is connected to the connective layer of the first stacked chip.
申请公布号 US8174126(B2) 申请公布日期 2012.05.08
申请号 US20100882805 申请日期 2010.09.15
申请人 HWANG TING-TING;CHEN HSIEN-TE;NATIONAL TSING HUA UNIVERSITY 发明人 HWANG TING-TING;CHEN HSIEN-TE
分类号 H01L23/12;H01L23/48;H01L23/52 主分类号 H01L23/12
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