| 摘要 |
PURPOSE: A pattern formation method of a semiconductor device is provided to arrange a fine pattern which has a size less than 20nm without performing a double patterning process in which a spacer patterning processes is performed for two times or a two photo is used for two times. CONSTITUTION: A second spacer pattern(112a) is formed on side parts of a second hard mask pattern and a first hard mask pattern(102a). The first hard mask pattern is removed. The second hard mask pattern formed on a region excluding the lower part of the second spacer pattern is removed. A third hard mask pattern is formed by etching a third hard mask layer. An etching target layer(100) is etched using the third hard mask pattern as an etching barrier.
|
