HIGH POWER LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PURPOSE: A high power light emitting device and a manufacturing method thereof are provided to increase optical power of a light emitting diode by forming a p-type electrode pad and an n-type electrode pad on one side of a support layer. CONSTITUTION: A first metal connection layer is formed in order to connect an n-type electrode pad and an n-type semiconductor layer(S50). A second seed metal layer and a first seed metal layer are respectively formed on the upper parts of a reflective film layer and the first metal connection layer(S60). A support layer is formed(S70). A second metal connection layer and a third metal connection layer are formed by inserting a metallic material into an etched part of the support layer(S80). A sapphire substrate is removed(S90). The n-type electrode pad and a p-type electrode pad are respectively formed on the second metal connection layer and the third metal connection layer(S100).