发明名称 |
METHOD FOR MANUFACTURING DIELECTRIC DEVICE |
摘要 |
<p>[Problem] To provide a method for manufacturing a dielectric device that can increase the etching selectivity between a ferroelectric substance and an electrode and perform high precision etching of a ferroelectric substance. [Solution] A dielectric layer (3) formed from an oxide is formed on a first electrode layer (2), which is formed from a metal. An etching mask (5) is formed on the dielectric layer (3). The first electrode layer is exposed by etching of the dielectric layer (3) being carried out via the etching mask (5) using etching plasma with a carbon fluoride gas as the main component.</p> |
申请公布号 |
WO2012057127(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
WO2011JP74533 |
申请日期 |
2011.10.25 |
申请人 |
ULVAC, INC.;YOSHIDA YOSHIAKI;KOKAZE YUTAKA |
发明人 |
YOSHIDA YOSHIAKI;KOKAZE YUTAKA |
分类号 |
H01L21/3065;H01L21/8246;H01L27/105;H01L41/332 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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