METHOD AND SYSTEM FOR COMPARING LITHOGRAPHIC PROCESSING CONDITIONS AND OR DATA PREPARATION PROCESSES

摘要

A set of optical rule checker (ORC) markers are identified in a simulated lithographic pattern generated for a set of data preparation parameters and lithographic processing conditions. Each ORC marker identifies a feature in the simulated lithographic pattern that violates rules of the ORC. A centerline is defined in each ORC marker, and a minimum dimension region is generated around each centerline with a minimum width that complies with the rules of the ORC. A failure region is defined around each ORC marker by removing regions that overlap with the ORC marker from the minimum dimension region. The areas of all failure regions are added to define a figure of demerit, which characterizes the simulated lithographic pattern. The figure of demerit can be evaluated for multiple simulated lithographic patterns or iteratively decreased by modifying the set of data preparation parameters and lithographic processing conditions.