发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATES
摘要 A method for fabricating a semiconductor device includes forming first plugs over a substrate, forming contact holes that expose the first plugs, ion-implanting an anti-diffusion material into the first plugs, and forming second plugs filling the contact holes.
申请公布号 US2012108057(A1) 申请公布日期 2012.05.03
申请号 US201113242709 申请日期 2011.09.23
申请人 HWANG SUN-HWAN 发明人 HWANG SUN-HWAN
分类号 H01L21/768;H01L21/28 主分类号 H01L21/768
代理机构 代理人
主权项
地址