发明名称 GATE VOLTAGE BOOSTING ELEMENT FOR CHARGE PUMP
摘要 Systems, methods, and devices that generate a desired boosted gate voltage to facilitate controlling a charge pump are presented. A multi-phase charge pump (e.g., two-phase CMOS charge pump) can comprise a desired number of switch cells (SCs), wherein each SC can include a gate boost switch control component, which employs two transistors (without the need for external circuitry), and generates a desired gate voltage, based at least in part on a desired clock signal, wherein the desired gate voltage is applied to a charge transfer switch, Mc, of the SC to facilitate transferring a voltage across the Mc to a node on the other side of the Mc, in each stage of the charge pump, wherein the SCs are associated with a desired number of flying capacitors to facilitate increasing the input voltage to a desired output voltage.
申请公布号 US2012105137(A1) 申请公布日期 2012.05.03
申请号 US20100915767 申请日期 2010.10.29
申请人 KOK CHI WAH;WONG OI YING;TAM WING SHAN;CANAAN MICROELECTRONICS CORPORATION LIMITED 发明人 KOK CHI WAH;WONG OI YING;TAM WING SHAN
分类号 G05F3/02 主分类号 G05F3/02
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