发明名称 DATA WRITING METHOD, MEMORY CONTROLLER, AND MEMORY STORAGE APPARATUS
摘要 A data writing method for a rewritable non-volatile memory module is provided, the rewritable non-volatile memory module has a plurality of physical blocks, each of the physical blocks has a plurality of physical pages, a portion of the physical blocks are mapped to a plurality of logical blocks, and each of the logical blocks has a plurality of logical pages. The data writing method includes receiving data, and the data has a plurality of data bits and belongs to one of the logical pages. The data writing method also includes determining whether each of the data bits is a specific value. The data writing method further includes not writing the data into the physical pages when each of the data bits is the specific value. Thereby, the performance of a memory storage apparatus is improved.
申请公布号 US2012110243(A1) 申请公布日期 2012.05.03
申请号 US201113012808 申请日期 2011.01.25
申请人 YEH CHIH-KANG;PHISON ELECTRONICS CORP. 发明人 YEH CHIH-KANG
分类号 G06F12/02 主分类号 G06F12/02
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