发明名称 |
Atomic Layer Deposition Film With Tunable Refractive Index And Absorption Coefficient And Methods Of Making |
摘要 |
Atomic layer deposition methods of forming one or more of a mixed silicon oxide/silicon nitride film or a mixed silicon oxide/silicon film are described in which the substrate is exposed sequentially to a first reactant gas comprising a silicon species and a second reactant gas comprising an oxygen species to form at least a partial layer of silicon oxide on the substrate during a first atomic layer deposition process. The substrate is then exposed sequentially to a third reactant gas comprising a silicon species and a fourth reactant gas comprising a species sufficient to form at least a partial layer of one or more of silicon nitride or silicon on the substrate during a second atomic layer deposition process. The process can be repeated multiple times to deposit one or more of a mixed silicon oxide/silicon nitride film and a mixed silicon oxide/silicon film. |
申请公布号 |
US2012108079(A1) |
申请公布日期 |
2012.05.03 |
申请号 |
US201113192993 |
申请日期 |
2011.07.28 |
申请人 |
MAHAJANI MAITREYEE;APPLIED MATERIALS, INC. |
发明人 |
MAHAJANI MAITREYEE |
分类号 |
H01L21/316 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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