发明名称 MEMORY CELL DEVICE AND METHOD OF MANUFACTURE
摘要 According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material and first metal species dispersed in the intercalating material.
申请公布号 US2012104341(A1) 申请公布日期 2012.05.03
申请号 US201213346749 申请日期 2012.01.10
申请人 MEGE SANDRA;ALTIS SEMICONDUCTOR, SNC;ADESTO TECHNOLOGY CORPORATION 发明人 MEGE SANDRA
分类号 H01L27/26;H01L47/00 主分类号 H01L27/26
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