SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided are a semiconductor device wherein, at the time when a transistor is operating, a drain leak current can be suppressed with an excellent longitudinal direction withstand voltage obtained, and a method for manufacturing the semiconductor device. The semiconductor device is characterized in being provided with: an opening (28) that reaches an n type drift layer (4) from an n+ contact layer (8) via a p type barrier layer (6); a regrown layer (27), which includes an undoped GaN channel layer (22) and a carrier supply layer (26) that are positioned to cover the p type barrier layer (6) and the like, which are exposed from the opening; an insulating film (9), which is positioned to cover the regrown layer (27); and a gate electrode (G), which is positioned on the insulating film (9). The semiconductor device is also characterized in that the Mg concentration (A) (cm-3) and the hydrogen concentration (B) (cm-3) in the p type barrier layer satisfy the formula (1): 0.1