| 摘要 |
A base substrate for gallium nitride wafer and fabricating method for gallium nitride wafer is provided to prevent bend of the nitride gallium film due to the mechanical separation by forming the double layer structure of nitride and oxide on the base substrate. In a base substrate for gallium nitride wafer and fabricating method, a base substrate having the double layer of the nitride thin film layer and acid solubility chemical etch layer are prepared(S1). A nitride gallium film is grown up on the nitride thin film of the base substrate(S4). The chemical etch layer is etched and the base substrate and nitride gallium film are separated(S5). The nitride gallium film is grown up over 50% of the base substrate thickness. The chemical etch layer comprises selected one of the tiO2, znO, mgO, snO2, srO2, CF4, scAlMgO4, srTiO3, laAlO3, liNbO3, srRuO3, mgAl2O4 and their solid solution.
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