| 摘要 |
<p>The method involves providing initial substrate (1) with a layer of semiconductor material (Sc1), and depositing another layer of semiconductor material (Sc2) by epitaxy. The substrate is etched to define active areas, each having the layers. An active area (za1) uncovered is left, and another active area (za2) is covered with protective material (5). The latter layer of the former active area is eliminated, so as to obtain a main surface (A1) made of the former material, where the latter active area has another main surface (A2) made of the latter material and comprises the former layer.</p> |
