发明名称 |
Termination and contact structures for a high voltage GaN-based heterojunction transistor |
摘要 |
A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer. |
申请公布号 |
US8169003(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US201113066200 |
申请日期 |
2011.04.07 |
申请人 |
MURPHY MICHAEL;POPHRISTIC MILAN;POWER INTEGRATIONS, INC. |
发明人 |
MURPHY MICHAEL;POPHRISTIC MILAN |
分类号 |
H01L31/072;H01L31/0328;H01L31/0336;H01L31/109 |
主分类号 |
H01L31/072 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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