发明名称 |
Buried silicide structure and method for making |
摘要 |
Methods for manufacturing buried silicide lines are described herein, along with high density stacked memory structures. A method for manufacturing an integrated circuit as described herein includes forming a semiconductor body comprising silicon. A plurality of trenches are formed in the semiconductor body to define semiconductor lines comprising silicon between adjacent trenches, the semiconductor lines having sidewalls. A silicide precursor is deposited within the trenches to contact the sidewalls of the semiconductor lines, and a portion of the silicide precursor is removed to expose upper portions of the sidewalls and leave remaining strips of silicide precursor along the sidewalls. Silicide conductors are then formed by inducing reaction of the strips of silicide with the silicon of the semiconductor lines. |
申请公布号 |
US8168538(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20090472158 |
申请日期 |
2009.05.26 |
申请人 |
CHEN SHIH-HUNG;HONG TIAN-JUE;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN SHIH-HUNG;HONG TIAN-JUE |
分类号 |
H01L21/44;H01L21/302;H01L21/461;H01L21/4763 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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