发明名称 |
Patterning method |
摘要 |
Disclosed is a patterning method including: forming a first film on a substrate; forming a multi-layered film including a resist film on the first film; forming a patterned resist film having a preset pattern by patterning the resist film by photolithography; forming a silicon oxide film different from the first film on the patterned resist film and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; etching the silicon oxide film to thereby form a sidewall spacer on a sidewall of the patterned resist film; removing the patterned resist film; and processing the first film by using the sidewall spacer as a mask. |
申请公布号 |
US8168375(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20080441007 |
申请日期 |
2008.06.06 |
申请人 |
NAKAJIMA SHIGERU;HASEBE KAZUHIDE;CHOU PAO-HWA;IWASHITA MITSUAKI;NIINO REIJI;TOKYO ELECTRON LIMITED |
发明人 |
NAKAJIMA SHIGERU;HASEBE KAZUHIDE;CHOU PAO-HWA;IWASHITA MITSUAKI;NIINO REIJI |
分类号 |
G03F7/00;G03F7/26;G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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