An integrated circuit provides high voltage isolation capabilities. The circuit includes a first area containing a first group of functional circuitry located in a substrate of the integrated circuit. This circuit also includes a second area containing a second group of functional circuitry also contained within the substrate of the integrated circuit. Capacitive isolation circuitry located in the conductive layers in the integrated circuit provide a high voltage isolation link between the first group of functional circuitry and the second group of functional circuitry. The capacitive isolation circuitry distributes a first portion of the high voltage isolation signal across the first group of capacitors in the capacitive isolation circuitry and distributes a second portion of the high voltage isolation circuitry across the second group of capacitors in the capacitive isolation circuitry.
申请公布号
US8169108(B2)
申请公布日期
2012.05.01
申请号
US20080060049
申请日期
2008.03.31
申请人
DUPUIS TIMOTHY;THOMSEN AXEL;DONG ZHIWEI;LEUNG KA Y.;SILICON LABORATORIES INC.
发明人
DUPUIS TIMOTHY;THOMSEN AXEL;DONG ZHIWEI;LEUNG KA Y.