发明名称 |
Trench gate semiconductor device and method of manufacturing the same |
摘要 |
A trench gate semiconductor device including: a semiconductor layer having a first conductivity type; a first diffusion region having a second conductivity type having a planar structure on the semiconductor layer; a second diffusion region having the first conductivity type positioned selectively on the first diffusion region; a gate electrode provided via a gate insulation film in each first trench facing the second diffusion region and penetrating through the first diffusion region to reach the semiconductor layer; a first semiconductor region of the second conductivity type provided at a position, in the semiconductor layer, apart in a lateral direction from the first diffusion region; a second semiconductor region of the second conductivity type provided at a position, in the first diffusion region, between the adjacent first trenches; and a main electrode in contact with the semiconductor layer and the second diffusion region. |
申请公布号 |
US8169021(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20080199224 |
申请日期 |
2008.08.27 |
申请人 |
HOKOMOTO YOSHITAKA;HARA TAKUMA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
HOKOMOTO YOSHITAKA;HARA TAKUMA |
分类号 |
H01L29/76;H01L21/336;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|