发明名称 |
GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus |
摘要 |
A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers constituting the active layer is composed of a varying-composition barrier layer, and the composition of the varying-composition barrier layer varies in the thickness direction thereof so that the band-gap energy in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the second GaN-based compound semiconductor layer and the varying-composition barrier layer, is lower than that in a region of the varying-composition barrier layer, the region being adjacent to a boundary between a well layer disposed closer to the first GaN-based compound semiconductor layer and the varying-composition barrier layer.
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申请公布号 |
US8168986(B2) |
申请公布日期 |
2012.05.01 |
申请号 |
US20090408106 |
申请日期 |
2009.03.20 |
申请人 |
NISHINAKA IPPEI;BIWA GOSHI;NAITO HIROKI;SONY CORPORATION |
发明人 |
NISHINAKA IPPEI;BIWA GOSHI;NAITO HIROKI |
分类号 |
H01L33/00;B82Y20/00;G03B21/14;H01L33/02;H01L33/06;H01L33/32;H01L33/50;H01L33/58;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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地址 |
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