| 发明名称 |
III-nitride semiconductor device fabrication |
| 摘要 |
A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to reduce stresses and prevent cracking. |
| 申请公布号 |
US8168000(B2) |
申请公布日期 |
2012.05.01 |
| 申请号 |
US20060452547 |
申请日期 |
2006.06.14 |
| 申请人 |
BRIERE MIKE;BEACH ROBERT;INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BRIERE MIKE;BEACH ROBERT |
| 分类号 |
C30B25/04 |
主分类号 |
C30B25/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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