| 摘要 |
A method of manufacturing a solid-state image sensor, includes forming a color-filter layer including a plurality of color filters on a wiring structure arranged on a semiconductor substrate on which a plurality of photoelectric converters are formed, forming a photosensitive microlens material layer on the color-filter layer, and forming microlenses by forming a latent image on the microlens material layer by exposing the microlens material layer using a photomask having a transmitted light distribution corresponding to a density of light-shielding portions each having a size smaller than a resolution limit of an exposure apparatus, and developing the microlens material layer, wherein the color-filter layer has a surface step, and the microlens material layer has a surface step corresponding to the surface step of the color-filter layer.
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