| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a NAND flash memory device capable of improving the resistance of select lines and capable of simplifying a manufacturing process, and to provide a method of manufacturing the same. <P>SOLUTION: A NAND flash memory device comprises: gate insulating films formed on a semiconductor substrate; first conductive film patterns for selection transistors and memory cells that are formed on the gate insulating films; dielectric films formed on the first conductive film patterns; second conductive film patterns formed on the dielectric films above the first conductive film patterns for memory cells; and select lines that are connected to the first conductive film patterns for the selection transistors and are formed from a material having a lower resistance than the second conductive film patterns. <P>COPYRIGHT: (C)2012,JPO&INPIT |
