METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make a semiconductor device with high reliability using an oxide semiconductor film by providing stable electrical characteristics to the semiconductor device.

SOLUTION: A crystalline oxide semiconductor film is formed without plural steps by preferentially depositing zinc having a smaller atomic weight on an oxide insulating film to form a seed crystal containing zinc as well as growing crystal of tin, indium and the like having a larger atomic weight on the seed crystal by use of difference in atomic weight between plural kinds of atoms included in a target for the oxide semiconductor film. Further, the crystal growth is caused using as a nucleus a seed crystal having a crystal containing zinc of a hexagonal crystal structure to form the crystalline oxide semiconductor film, so that the crystalline oxide semiconductor film is formed which is a single crystal or substantially a single crystal.

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