FORMING METHOD OF OXIDE SEMICONDUCTOR THIN FILM, OXIDE SEMICONDUCTOR TRANSISTER, AND FORMING METHOD OF THE SAME

摘要

PURPOSE: A method of forming an oxide semiconductor thin film and an oxide semiconductor transistor are provided to simplify a process and increase thermal reliability by implementing a P-type semiconductor having electrical properties similar to a poly-crystal silicon. CONSTITUTION: A tin monoxide powder is sintered and the tin monoxide target is formed(S200). The tin monoxide target is mounted in a vacuum container(S210). A substrate is installed to a substrate holder(S220). The electricity is applied in the tin monoxide target(S230). The tin monoxide is evaporated in the substrate(S240). The deposited tin monoxide is heat-treated(S250).