| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method capable of removing Ti-based sediment on the surface of a processing chamber of a plasma processing apparatus without generating a foreign body such as an boronic oxide. <P>SOLUTION: The plasma processing method includes: product etching (step S1: processing of a sample including Ti material); thereafter carbon system deposition discharge for depositing a carbon system film on a Ti reaction product deposited on the surface of the processing chamber (step S2); and thereafter chlorine electric discharge for removing the carbon system film abd the Ti deposited on the surface of the processing chamber (step S3). <P>COPYRIGHT: (C)2012,JPO&INPIT |
