发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To form an embedded insulating film such that a pattern formed by etching will not collapse. <P>SOLUTION: There is provided a method for manufacturing a semiconductor device in which an insulating film is formed on a workpiece etched into a predetermined pattern by embedding the insulating film on the pattern. The method comprises the steps of: cleaning an etching residue of the workpiece remaining on the etched pattern with a first chemical liquid; rinsing the workpiece subjected to cleaning with the first chemical liquid with a rinse liquid; and applying an application liquid designed to form an insulating film to the workpiece subjected to rinsing. The process from the step of cleaning with the first chemical liquid through the step of applying the application liquid is performed in the same processing room such that the workpiece maintains the state in which the liquids are held on the pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012084789(A) |
申请公布日期 |
2012.04.26 |
申请号 |
JP20100231502 |
申请日期 |
2010.10.14 |
申请人 |
TOSHIBA CORP |
发明人 |
TOBISAWA TAKESHI;YAMADA NOBUHIDE;OGAWA YOSHIHIRO;KIYOTOSHI MASAHIRO |
分类号 |
H01L21/31;B05C5/00;B05C9/14;H01L21/304 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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