SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING DEVICE SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a substrate processing device system which can decrease defects in an insulator film.

SOLUTION: A wafer where a TiN film as a metal film and a ZrO2film as an insulator film are formed is carried into a processing chamber. Into the processing chamber, O2is supplied as modifier gas modifying the ZrO2film. The wafer is irradiated with electromagnetic waves to excite dipoles contained in the ZrO2film to modify the ZrO2film. Then, the wafer is carried out of the processing chamber.

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