发明名称 |
SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS |
摘要 |
A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.
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申请公布号 |
US2012100486(A1) |
申请公布日期 |
2012.04.26 |
申请号 |
US201113243204 |
申请日期 |
2011.09.23 |
申请人 |
SAGEHASHI MASAYOSHI;OHSAWA YOUICHI;HASEGAWA KOJI;KINSHO TAKESHI;KOBAYASHI TOMOHIRO |
发明人 |
SAGEHASHI MASAYOSHI;OHSAWA YOUICHI;HASEGAWA KOJI;KINSHO TAKESHI;KOBAYASHI TOMOHIRO |
分类号 |
G03F7/20;C07D333/46;C07J33/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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