| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor transistor having low on-current without increasing the occupied area, to provide a display device using the oxide semiconductor transistor having low on-current as a pixel without reducing the opening ratio, and to provide a display device using the oxide semiconductor transistor having low on-current as a pixel and using the oxide semiconductor transistor having high on-current as a driving circuit on the same substrate. <P>SOLUTION: A semiconductor device comprises: a first gate electrode and a second gate electrode that are provided on an insulating surface and are disposed apart from each other; an oxide semiconductor film including a region overlapping the first gate electrode and the second gate electrode and a region not overlapping the first gate electrode and the second gate electrode via a gate insulating film; and an insulating film that covers the gate insulating film, the first gate electrode, the second gate electrode, and the oxide semiconductor film and directly contacts the oxide semiconductor film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
