| 摘要 |
According to a method for forming a nanogap pattern for a biosensor, an oxide film is firstly formed on a substrate, and a first nitride film is formed on the oxide film. The first nitride film is partially etched to form a first nitride film pattern which exposes the oxide film and which has a first gap that becomes narrower from the top to the bottom thereof. A second nitride film is formed along the first nitride film pattern and along a sidewall and a bottom surface of the first gap. The second nitride film is etched to form a second nitride film pattern on the sidewall of the first gap, wherein the second nitride film pattern has a second gap, the width of which is smaller than that of the first gap. The oxide film is etched using the second nitride film pattern as an etching mask to form an oxide film pattern having a third gap, thereby completing the formation of the nanogap pattern. |
