发明名称 METAL CAPACITOR AND METHOD OF MAKING THE SAME
摘要 A metal capacitor structure is disclosed. The metal capacitor structure includes: a dielectric layer having a first region and a second region, a dielectric constant of the dielectric layer in the second region being higher than a dielectric constant of the dielectric layer in the first region; a dual damascene metal interconnection positioned in the first region; and a damascene capacitor electrode positioned in the second region.
申请公布号 US2012098094(A1) 申请公布日期 2012.04.26
申请号 US201213342106 申请日期 2012.01.01
申请人 YANG CHIN-SHENG 发明人 YANG CHIN-SHENG
分类号 H01L29/92 主分类号 H01L29/92
代理机构 代理人
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