| 摘要 |
1,228,278. Semi-conductor devices. SIEMENS A.G. 2 May, 1969 [3 May, 1968], No. 22460/69. Heading H1K. A composite semi-conductor arrangement is made by forming one or more recesses, as by etching, in semi-conductor material forming one face of a monocrystalline body, lining each recess with monocrystalline insulating or intrinsic material, filling the lined recesses with monocrystalline semi-conductor material and then forming at least one semi-conductor component in the material in each recess and in the material between the recesses. The original monocrystalline body may be homogeneous and of N-type silicon or comprise a layer of one conductivity type epitaxially grown on a substrate of the opposite type or on an insulating layer on such a substrate. In the latter two cases the recesses extend through the uppermost layer and in all cases the recesses may be filled with material of the same or of the opposite type to that of the layer in which the recesses are formed. In the embodiment the components formed are transistors made by common planar diffusion steps. Where the filling and layer conductivity types are opposed complementary transistors are formed by diffusing the emitters and bases of the respective types of transistor simultaneously and forming the emitters of the latter type in a subsequent diffusion. Suitable materials for lining the recesses are alumina and aluminium silicate deposited from gaseous aluminium aryls and alkyls, and intrinsic silicon carbide. |
