发明名称 PLANT FOR THE TREATMENT OF SILICON OF TECHNICAL PURITY
摘要 A plant for high-productive treatment of silicon of technical purity in melts of low-melting metals is developed, consisting of chamber for the treatment of silicon, air-lock chambers for loading and unloading of the treated silicon and removal of slag. The air-lock chamber for loading contains storage bin with dosing device for forming of silicon charges, which are periodically removed to a crucible with melt of low-melting metal, placed in treatment chamber, in resistance furnace, heated to 1200 °C. On a movable rod in holder tube for blowing with gas of melt of low-melting metal and capacity for extraction of scaly crystals of treated silicon from melt, having the possibility to remove to the lift cell of air-lock chamber for unloading of the treated silicon. After removal of new charge of the treated silicon to the crucible, from the lift cell the new capacity is removed to the crucible for extraction of the following portion of scaly crystals.
申请公布号 UA98161(C2) 申请公布日期 2012.04.25
申请号 UA20100004604 申请日期 2010.04.19
申请人 MARONCHUK IHOR YEVHENOVYCH;KULIUTKINA TAMARA FATYKHIVNA 发明人 MARONCHUK IHOR YEVHENOVYCH;KULIUTKINA TAMARA FATYKHIVNA
分类号 C01B33/02;C01B33/037 主分类号 C01B33/02
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