| 摘要 |
Producing polycrystalline silicon, comprises introducing a reaction gas containing a silicon-containing component and hydrogen using at least one nozzle, into a reactor containing at least one heated filament rod on which silicon is deposited, where Archimedes number (Ar n) indicates the flow conditions in the reactor depending on the filling degree indicating the ratio of a rod volume to the reactor void volume for a filling degree of up to 5%. Producing polycrystalline silicon, comprises introducing a reaction gas containing a silicon-containing component and hydrogen using at least one nozzle, into a reactor containing at least one heated filament rod on which silicon is deposited, where Archimedes number (Ar n) indicates the flow conditions in the reactor depending on the filling degree indicating the ratio of a rod volume to the reactor void volume for a filling degree of up to 5%, and the Archimedes number, which is downward within the function is equal to 2000x filling degree -> 0> .> 6>and Archimedes number, which is upward within the function is equal to 17000x filling degree -> 0> .> 9>. The filling degree of greater than 5% is at least 750 to not > 4000. |
