| 摘要 |
<p>PURPOSE: A high voltage register is provided to reduce destruction possibility of a special region of a register by smoothly forming the resister and evenly distributing an electric field. CONSTITUTION: Poly-silicon devices(120, 121) are partly formed on isolation structures(90, 91). A mutual linking structure(150) is formed on doped regions(60, 70) and the isolation structure. The mutual linking structure comprises an inter layer dielectric film which offers the separation between mutual linking layers. A register(200) is formed in one of the mutual linking layers of the mutual linking structure. Connection terminals(220, 221) are formed on the mutual linking layer. A first part of the resister comprises a cathode terminal and a second part of the resister comprises an anode terminal.</p> |
