发明名称 |
Method of forming an aluminum oxide layer |
摘要 |
Methods of forming aluminum oxide layers on substrates are disclosed. In some embodiments, the method includes depositing an aluminum oxide seed layer on the substrate using a first process having a first deposition rate. The method further includes depositing a bulk aluminum oxide layer atop the seed layer using a metalorganic chemical vapor deposition (MOCVD) process having a second deposition rate greater than the first deposition rate. |
申请公布号 |
US8163343(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20080203647 |
申请日期 |
2008.09.03 |
申请人 |
KHER SHREYAS S.;OLSEN CHRISTOPHER S.;DATE LUCIEN;APPLIED MATERIALS, INC. |
发明人 |
KHER SHREYAS S.;OLSEN CHRISTOPHER S.;DATE LUCIEN |
分类号 |
C23C16/40 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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