发明名称 Process for adjusting the size and shape of nanostructures
摘要 In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.
申请公布号 US8163656(B2) 申请公布日期 2012.04.24
申请号 US20090419881 申请日期 2009.04.07
申请人 CHOU STEPHEN Y.;WANG YING;LIANG XIAOGAN;LIANG YIXING 发明人 CHOU STEPHEN Y.;WANG YING;LIANG XIAOGAN;LIANG YIXING
分类号 H01L21/477 主分类号 H01L21/477
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