发明名称 Dual-pore structure polishing pad
摘要 The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 μm and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 μm. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.
申请公布号 US8162728(B2) 申请公布日期 2012.04.24
申请号 US20090586859 申请日期 2009.09.28
申请人 JAMES DAVID B.;SANFORD-CRANE HENRY;ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. 发明人 JAMES DAVID B.;SANFORD-CRANE HENRY
分类号 B24D11/00 主分类号 B24D11/00
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