发明名称 |
Dual-pore structure polishing pad |
摘要 |
The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 μm and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 μm. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad. |
申请公布号 |
US8162728(B2) |
申请公布日期 |
2012.04.24 |
申请号 |
US20090586859 |
申请日期 |
2009.09.28 |
申请人 |
JAMES DAVID B.;SANFORD-CRANE HENRY;ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
JAMES DAVID B.;SANFORD-CRANE HENRY |
分类号 |
B24D11/00 |
主分类号 |
B24D11/00 |
代理机构 |
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