SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to uniformly etch a first conductive film regardless of a level of gap regions, thereby improving reliability of the semiconductor device. CONSTITUTION: An insulating structure which includes insulation patterns(120a,120Ua) laminated by being separated from each other is formed on a substrate. Gap regions(145L,145,145U) between the adjacent insulation patterns are defined. A first conductive film is formed by covering a sidewall of the insulating structure and filling the gap regions. A second conductive film is formed by covering the first conductive film on the sidewall of the insulating structure. The thickness of the second conductive film on the upper sidewall of the insulating structure is greater than the thickness of the second conductive film on the lower sidewall of the insulating structure.