| 摘要 |
A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure 50a, which includes: an active layer 32 including an AlaInbGacN crystal layer (where a+b+c=1, a≧0, b≧0 and c≧0); an AldGaeN overflow suppressing layer 36 (where d+e=1, d>0, and e≧0); and an AlfGagN layer 38 (where f+g=1, f≧0, g≧0and f<d). The AldGaeN overflow suppressing layer 36 is arranged between the active layer 32 and the AlfGagN layer 38. The AldGaeN overflow suppressing layer 36 includes an In-doped layer 35 that is doped with In at a concentration of 1×1016 atms/cm3 to 8×1018 atms/cm3. A normal to the principal surface of the nitride-based semiconductor multilayer structure 50a defines an angle of 1 to 5 degrees with respect to a normal to an m plane.
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