发明名称 INTERNAL VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide an internal voltage generating circuit which has small current consumption in a standby mode and can stably generate an internal voltage in a normal mode, and to provide a semiconductor device which is improved in safety of operation by utilizing the internal voltage as a driving power source after the internal voltage reaches a target level, and a semiconductor device which has small current consumption in the standby mode. <P>SOLUTION: The internal voltage generating circuit includes: a voltage detection part which detects whether a voltage level at an internal voltage end is equal to a first target voltage level or equal to a second target voltage level higher than the first target voltage level through control over a normal operation signal, and outputs a detection result as a voltage detection signal; an operation control signal generation part which selectively activates an operation control signal in response to the normal operation signal and voltage detection signal; a periodic pulse signal generation part which generates a periodic pulse signal in response to the operation control signal as the normal operation signal is activated; and a charge pumping part which generates the internal voltage by carrying out charge pumping through control over the periodic pulse signal. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012079397(A) 申请公布日期 2012.04.19
申请号 JP20110071340 申请日期 2011.03.29
申请人 HYNIX SEMICONDUCTOR INC 发明人 SHIN YOON JAE
分类号 G11C16/06 主分类号 G11C16/06
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