METHOD FOR PREPARING POLYCRYSTALLINE SILICON THIN FILM

摘要

A method for preparing a polycrystalline silicon thin film according to the present invention comprises: the crystallization acceleration layer formation step of forming a crystallization acceleration layer comprising a metal fluoride on an insulating substrate; the buffer layer formation step of forming a buffer layer comprising a silicon compound on the crystallization acceleration layer; the metal layer formation step of forming a metal layer on the buffer layer; the oxide film formation step of heat treating the metal layer to form a metal oxide film on the surface of the metal layer or depositing a metal oxide film on the metal layer to form a metal oxide film; the silicon layer formation step of laminating an amorphous silicon layer on the oxide film formed at the oxide film formation step; and the crystallization step of generating crystalline silicon at the amorphous silicon layer by heat treatment using metal particles of the metal layer or the oxide film as a catalyst.