发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which enables the suppression of occurrence of a failure in electrical continuity. <P>SOLUTION: The method comprises: performing the alignment of a plurality of first electrodes 3 on a glass substrate 2 and a plurality of second electrodes 5 on a film substrate 4 so that the corresponding electrodes are opposed to each other; putting a bonding material 9 including a thermosetting resin with conductive particles dispersed therein between the plurality of first and the plurality of second electrodes 3 and 5 and in condition, sandwiching and holding the bonding material 9 between the glass substrate 2 and the film substrate 4; irradiating part of the film substrate 4 where the plurality of second electrodes 5 are formed with laser light L, and preheating the film substrate 4 by the laser light L, thereby to tentatively press-fit the film substrate 4 to the glass substrate 2; and press-fitting the glass substrate 2 and film substrate 4 to each other on a full-scale basis while heating and pressing them with a heating tool 12, whereby the mutually corresponding electrodes of the plurality of first and the plurality of second electrodes 3 and 5 are electrically bonded with each other through the bonding material 9. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012079807(A) 申请公布日期 2012.04.19
申请号 JP20100221617 申请日期 2010.09.30
申请人 HITACHI CABLE FILM DEVICE LTD 发明人 KATSUMATA MASAYO
分类号 H01L21/60 主分类号 H01L21/60
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