发明名称 |
MULTI-SEMICONDUCTOR MATERIAL VERTICAL MEMORY STRINGS, STRINGS OF MEMORY CELLS HAVING INDIVIDUAL BIASABLE CHANNEL REGIONS, MEMORY ARRAYS INCORPORATING SUCH STRINGS,AND METHODS OF ACCESSING AND FORMING THE SAME |
摘要 |
Multi-semiconductor vertical memory strings, strings of memory cells having individually biasable channel regions, arrays incorporating such strings and methods for forming and accessing such strings are provided. For example non-volatile memory devices are disclosed that utilize NAND strings of serially-connected non-volatile memory cells. One such string can include two or more serially connected non-volatile memory cells each having a channel region. Each memory cell of the two or more serially connected non volatile memory cells shares a common control gate and each memory cell of the two or more serially connected non-volatile memory cells is configured to receive an individual bias to its channel region. |
申请公布号 |
WO2011146455(A3) |
申请公布日期 |
2012.04.19 |
申请号 |
WO2011US36775 |
申请日期 |
2011.05.17 |
申请人 |
MICRON TECHNOLOGY, INC.;FISHBURN, FRED |
发明人 |
FISHBURN, FRED |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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