| 摘要 |
A semiconductor laser device is provided to decrease a driving voltage by widening a width of other side of a ridge than the width of one side of the ridge and to prolong the life span of the semiconductor laser device by reducing the heat generation of the semiconductor laser device through the low driving voltage. A semiconductor laser device includes a substrate, a first substance layer, a second substance layer, an active layer, and first and second electrodes. The second substance layer includes a second clad layer(146) and a ridge(147). The ridge(147) is formed on the second clad layer(146) to be projected perpendicularly to the active layer. The width of one side of the ridge(147) for light emitting is narrower than the width of the opposite side for light emitting so that the ridge(147) forms a planar trapezoid. |
