| 摘要 |
1285597 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 13 Nov 1969 [25Nov 1968] 55555/69 Heading HlK Insulation on the body of a semi-conductor device includes a layer of silicon nitride (upon which lie conductors connected to the device) and a layer of glass, the layer of silicon nitride being closer to the semi-conductor. The NPN transistor shown has on its surface a layer 16 of silicon oxide or alumina which is covered by a silicon nitride layer 19. The glass layer 23 (which may be of phosphosilicate glass or of many other glasses including the following silicate glasses :- lead, soda, soda-lime, borosilicate, and aluminosilicate) as shown protects the conductors 21 and contacts 22 of Al, Pt, Pd, Mo, Cr-Ag-Cr, or Ti-Ag-Cr. The nitride layer may instead be in direct contact with the semi-conductor; there may be intervening insulative layers between the nitride and glass layers; and there may be further insulating layers (e.g. of glass), and contact layers, beyond the glass layer. |
