| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
A method of making a semiconductor device having an ESD protection element which can achieve compatibility between high drain-to-backgate withstand voltage and ESD protection of DMOSFET gates. |
| 申请公布号 |
US2012094452(A1) |
申请公布日期 |
2012.04.19 |
| 申请号 |
US201113330082 |
申请日期 |
2011.12.19 |
| 申请人 |
MORI HIDEKI;SONY CORPORATION |
发明人 |
MORI HIDEKI |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
